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IBM, which turned 100 recently, on Thursday said it has developed solid-state chips that have the same capacity as current NAND flash storage but 100 times more performance and much longer durability. The so-called phase-change memory (PCM) chips have the ability to store two bits of data per cell without corrupting it, which is not something that could have been said of early versions of the technology. The nonvolatile memory retains data after its power supply is shut down, just like NAND flash memory.