Fujitsu ReRAM leads to fast mobile devices

12/14, 3:15pm

Fujitsu ReRAM

Fujitsu today unveiled a new form of memory it believes can replace flash storage. Called a new variant on resistive RAM (or ReRAM), the technology is designed to maintain data after losing power, as with flash, but to have the fast speed of the RAM used for temporary memory in most devices. Sending a current to the memory changes its resistive quality and allows information to be read or written quickly. Using nickel oxide wrapped in titanium and with a platinum shell, the new format is both more power-efficient and faster: sending 100 micro-amperes of current will wipe memory while an entire operation can be finished in 5 nanoseconds. The speed is 10,000 times faster than earlier attempts at ReRAM, Fujitsu explains.