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Tag - NAND
Intel Corporation and Micron Technology, Inc. today unveiled 3D XPoint technology, a non-volatile memory that has the potential to enhance any device, application or service that benefits from fast access to large sets of data. While superficially similar to HP's Memristor technology, 3D XPoint technology is a new and major breakthrough in memory process technology.
Samsung has debuted the industry’s first 3D vertical NAND flash memory architecture. Just as Intel has pushed processor technology with its 3D tri-gate architecture first seen on its ‘Ivy Bridge’ designs, Samsung’s engineers have taken a vertical to boost performance applying a similar principle to the way it designs its next-generation NAND flash designs. According to Samsung, its new design overcomes inherent technical challenges that arise when moving to 10nm processes including cell-to-cell interference while breaking through scaling limitations.
Intel is now shipping its first SSDs based on its new 20nm NAND Flash memory fabrication process. Although shifting to the new process delivers manufacturing, power efficiencies, and the potential to ramp up the capacity of its SSDs, the first 335-series drive only comes in at 240GB size with no performance boost. It does, however, signal the first time Intel has been able to successfully apply its HiK/metal gate stack used in its CPU designs to NAND production.
[Updated with correction] The CEO of OCZ Technology Group, a solid state drive manufacturer, announced last week that the company would not be able to produce enough of its products to meet industry demand. As EE Times reports, the shortage in NAND components -- the chips that allow for smartphones and mobile devices to have high-density, low-power internal memory -- is said to be industry-wide and an outgrowth of the increasing demand for NAND supplies. The company believes that the supply situation will resolve itself, but it is moving to reorganize its production processes to account for supply considerations.
Apple is rumored to be in talks to buy an Israeli startup called Anobit in deal said to be valued up to $500 million. The fabless semiconductor company has developed a flash memory controller technology that makes cheap non-volatile memory work as well as more expensive memory. The company claims to be able to make 3-bit multi-level cell MLC NAND flash, which typically has a shorter working life, last as long as 2-bit MLC, and 2-bit MLC function as long as single-level cell flash.
Samsung has announced that it has developed the world’s first toggle Double Data Rate 2.0 64-gigabit MLC NAND flash memory chips. Samsung has been able to achieve the higher density by fabricating the new chips on a 20nm process. They have a 400 megabits bandwidth are said to 10 times faster than the Single Data Rate NAND flash memory used in most smartphones and tablets in use today.
A leaked roadmap for Intel's of solid-state drives indicates the company is planning five additions to its SSD lines this year. According to the leak, Intel will establish a new high-end line with the "Ramsdale" SSD 720 Series, and the "Lyndonville" SSD 710 Series. Two new lines, the 20GB "Larsen Creek" and 40GB/80GB "Paint Creek," appear to be designed for high-performance caching functions such as improving boot time. According to the leaked roadmap, Intel will also extend the SSD 510 line with the "Cherryville" SSD 520 Series.
Toshiba has announced that it has begun mass production of NAND flash components constructed using 24 nanometer technology. The manufacturing process is said to be used for 2 bit-per-cell 64-gigabit components, which are claimed to reach the highest density (8GB) on a single chip.
Toshiba on Monday introduced a new 64GB embedded NAND flash memory module, claimed to be the highest capacity in the industry. The component combines a dedicated controller and sixteen 32Gbit chips manufactured using the company's 32nm technology. Chip thinning and layering methods help bring the chip thickness down to just 30 micrometers.
The US International Trade Commission has reportedly begun an investigation focusing on several companies that produce or purchase NAND flash components, including Samsung, RIM, Apple and others, according to Barron's. BTG International has accused Samsung of violating several patents involving "MLC" type flash memory.