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Intel on Wednesday said it would devote $100 million in cash investments to US university research in the course of the next five years. These funds will be used to support a number of Intel Science and Technology Centers, with the first to be built at Stanford University. Its focus will be on next-generation visual computing.
Research at Cornell University could lead to low-power, high-efficiency memory chips. It takes strontium titanate oxide and squeezes it on silicon in a fashion that would make the two organic compounds ferroelectric. Ferroelectric materials are already used as memory for storing data on subway passes, for example, but could find a use in transistors as well. Headed by Cornell materials scientist Darrell Schlom, the research could translate into faster, low-power transistors that can be turned on instantly.