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Rumor: Samsung Galaxy S III thinner, to get 3D follow-up

updated 08:30 am EST, Mon February 6, 2012

Samsung Galaxy S III details allegedly slip

A new rumor has fueled speculation surrounding the Galaxy S III. The hardware will reportedly squeeze down to as little as 7mm (0.28in) thick by eking every amount of thinness from the internal components, ETNews claimed. The mainboard, chips, and connectors would all be about 10 to 20 percent thinner than usual.

The design would be so thin that Samsung would have to 'cheat' on thinness claims much like Motorola did with the Droid RAZR, according to the tip. Although it would have an eight-megapixel camera like the Galaxy S II, its identical thickness could see the camera protrude from the body.

The hardware would initially have a quad-core processor with 4G LTE support in mind and, as expected, ship with Android 4.0. In the long term, variants would take on features both of existing Galaxy S II variants and fresh ones of its own. A Galaxy Note was anticipated, but there were also expectations of upgraded cameras and even a 3D-capable version, suggesting Samsung would follow in the path of the HTC Evo 3D and LG Optimus 3D.

If accurate, parts would start shipping for assembly in March with anticipation of a May release, which would roughly sit in line with the one-year anniversary of the Galaxy S II. Samsung was previously rumored to be missing Mobile World Congress in late February to better set launch expectations, which gained support when the company did rule out the Galaxy S III at the Barcelona event. The company has at times been criticized for announcing well in advance of when it was ready and may announce only when it's genuinely ready.

The rumor isn't verified and does have a possible contradiction in Samsung's public plans for its chips. Its only announced new mobile processor for 2012 is a dual-core 2GHz part, and no quad-core Exynos chips have been mentioned so far. Samsung isn't likely to use a mild upgrade of an existing chip, however.

by MacNN Staff



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