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Purdue researchers develop breakthrough RAM technology

updated 08:40 am EDT, Wed September 28, 2011

Purdue shows-off FeRAM technology

Purdue University researchers have demonstrated a proof of concept for a new form of computer memory. The breakthrough has the potential to drastically reduce the amount of power consumed by currently flash-based memory solutions, while also offering significant speed boosts. Although at a nascent stage, the researchers have shown how ferroelectric transistor random access memory (FeRAM) can be developed.

As a non-volatile form of RAM, the new chips can store data even after a device has been switched off. This allows it to consume as much as 99 percent less power than even NAND flash memory. The new technology is also compatible with manufacturing processes for complementary metal oxide semiconductors (CMOS) used to make current chips.

The researchers have published their findings in this month's Nano Letters, which is published by the American Chemical Society. Not surprisingly, they have also sought to patent the breakthrough. [via Slashdot]

by MacNN Staff



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