toggle

AAPL Stock: 123.38 ( + 0.61 )

Printed from http://www.macnn.com

Samsung makes RRAM 1m times more rewritable than flash

updated 10:15 pm EDT, Tue July 12, 2011

Breakthrough in Resistive Random Access Memory

Samsung has announced that it has achieved a significant breakthrough in resistive random access memory (RRAM) technology. The company's engineers and scientists have reportedly made significant improvements in durability, enabling RRAM prototypes to switch between writing and deleting up to a trillion times. The milestone is said to be approximately a million times higher than standard flash-memory durability.

The company's RRAM technology utilizes tantalum-based structures rather than traditional silicon construction. Aside from the significant jump in rewrite cycles, the chips are also said to satisfy basic requirements such as high densities, fast switching speeds, and low power consumption.

The RRAM work is published in the current issue of scientific journal Nature Materials. It remains unclear if the technology will eventually make its way into production.




by MacNN Staff

POST TOOLS:

TAGS :

toggle

Comments

Login Here

Not a member of the MacNN forums? Register now for free.

toggle

Network Headlines

Follow us on Facebook

toggle

Most Popular

Advertisement

Recent Reviews

15-inch MacBook Pro with Force Touch

Apple's 15-inch Retina MacBook Pro continues to be a popular notebook with professional users and prosumers looking for the ultimate ...

Typo keyboard for iPad

Following numerous legal shenanigans between Typo -- a company founded in part by Ryan Seacrest -- and the clear object of his physica ...

Entry-level 27-inch Retina iMac

The 27-inch Apple iMac with 5K Retina display is already one of the best value-for-money Macs that Apple has ever released. It was som ...

toggle

Most Commented