AAPL Stock: 111.79 ( + 0.19 )

Printed from

Toshiba, SanDisk to build sub-30nm NAND flash in 2010

updated 05:20 pm EDT, Mon September 21, 2009

Toshiba, SanDisk to mass-produce sub-30nm memory

Toshiba and SanDisk will produce 20nm-class NAND flash memory at their joint-venture facility in Yokkaichi, Japan in the second half of 2010, DigiTimes reported on Monday, citing industry sources. The facility will scale up production to about 200,000 wafers per month as a result. Toshiba used the factory to build 3-bit per cell (3bpc) 32nm memory, which were expected to account for 50 percent of capacity by the end of 2009, but the schedule was delayed.

A rival joint venture of Intel and Micron Technology expects to introduce 20nm-based memory technology later in 2009, with mass production of the current 32GB NAND memory using 3bpc 34nm technology on schedule at joint venture factory IM Flash Technologies.

Mass production of the smaller NAND drives is expected to reduce prices of current flash memory products and speed up the gradual replacement of hard disk-based drives.

by MacNN Staff



Login Here

Not a member of the MacNN forums? Register now for free.


Network Headlines

Follow us on Facebook


Most Popular


Recent Reviews

Polk Hinge Wireless headphones

Polk, a company well-established in the audio market, recently released a new set of headphones aimed at the lifestyle market. The Hin ...

Blue Yeti Studio

Despite being very familiar with Blue Microphones' lower-end products -- we've long recommended the company's Snowball line of mics ...

ZTE Spro 2 Smart Projector

Home theaters are becoming more and more accessible these days, but maybe you've been a bit wary about buying a home projector. And h ...


Most Commented